Could not find one and just tried some code on a MH-ET LIVE minikit.
The code compiles and the esp did not blow up!
Code: Select all
void setup()
{
pinMode( LED0_PIN, OUTPUT );
pinMode( LED1_PIN, OUTPUT );
pinMode( LED2_PIN, OUTPUT );
pinMode( LED3_PIN, OUTPUT );
pinMode( LED4_PIN, OUTPUT );
pinMode( TFT_BACKLIGHT_PIN, OUTPUT );
pinMode( I2C_SCL_PIN, INPUT_PULLUP );
pinMode( I2C_SDA_PIN, INPUT_PULLUP );
gpio_set_drive_capability((gpio_num_t)LED0_PIN, GPIO_DRIVE_CAP_3);
gpio_set_drive_capability((gpio_num_t)LED1_PIN, GPIO_DRIVE_CAP_3);
gpio_set_drive_capability((gpio_num_t)LED2_PIN, GPIO_DRIVE_CAP_3);
gpio_set_drive_capability((gpio_num_t)LED3_PIN, GPIO_DRIVE_CAP_3);
gpio_set_drive_capability((gpio_num_t)LED4_PIN, GPIO_DRIVE_CAP_3);
...
...
The above project uses mosfets on the outputs and increased drive strength would mean I could lower the gate resistor value.
Atm I use 330R and this means I could got to 100R?
Which brings the total current to 165mW but I could not find any data to tell me that is a safe value.
Anyone?